http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06177047-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1992-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b33158749f97aed3cfc6b1b26a00cb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6496a5c6d264a6eac31fc8a8d3478442 |
| publicationDate | 1994-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06177047-A |
| titleOfInvention | Selective vapor deposition method and carrier gas source device |
| abstract | (57) [Summary] [Object] To provide a method for performing selective vapor phase growth of a polycrystalline Si layer reliably and with good controllability. A selective vapor deposition method is used for a Si substrate surface of a Si substrate layer (10) having a Si substrate surface (14) exposed by removing a part of an insulating film (12) on the Si substrate (11). A polycrystalline Si layer (16) is selectively grown on (14). A step of placing the Si substrate layer (10) in the reaction chamber (60) and supplying a carrier gas containing water and oxygen together at a concentration lower than 1 ppm to the reaction chamber (60) to raise the temperature; After that, a step of supplying a carrier gas containing water and oxygen in a concentration of about 1 ppm or more to the reaction chamber (60), and after this step, supplying a Si material gas together with the carrier gas to the reaction chamber (60). And a step of performing. |
| priorityDate | 1992-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.