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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J43-24
filingDate 1991-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e867f449236fe61231fed5261c829006
publicationDate 1994-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06176734-A
titleOfInvention Electron multiplier
abstract (57) [Summary] (Modified) [Purpose] Supplying low-priced electron multipliers by using a structure and manufacturing method that apply semiconductor microfabrication technology with excellent mass productivity to manufacture electron multipliers. To enable. [Structure] After transferring and developing one or more fine figures by a light exposure method or an electron beam exposure method, a mask is formed on one or both sides of a substrate 1 having an opening corresponding to the figures by etching, Micropores 2 penetrating the front and back of the substrate by etching using a liquid chemical or plasma gas using this, or ion beam etching, or a combination thereof. An electron multiplication element manufactured by forming a secondary electron multiplication film 3 on the inner wall of the substrate by a chemical vapor deposition method.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100873634-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008508693-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012533860-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103168339-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103168339-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000206252-A
priorityDate 1991-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 24.