http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06169114-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-22 |
filingDate | 1992-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ab7fddcba1adee09e30f38eb437ccb4 |
publicationDate | 1994-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H06169114-A |
titleOfInvention | Hot electron transistor |
abstract | (57) [Abstract] [Purpose] To provide a hot electron transistor which can be expected to improve the current gain as compared with the conventional one. [Composition] A superconductor base hot in which the emitter 21 is composed of an Nb-doped SrTiO 3 layer, the base 23 is composed of a YBa 2 Cu 3 O 7-x superconductor, and the collector 23 is composed of an Nb-doped SrTiO 3 substrate. In the electron transistor, the collector 23 substrate has a crystal orientation of < 410> SrTiO 3 substrate. |
priorityDate | 1992-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.