http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06168882-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_325e8f74339359cd24e45eb790ace68f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 |
| filingDate | 1991-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83241631e6bfa3891e5caac667aa028d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f8c681f6e1f3006fdc34c08140e5a6d |
| publicationDate | 1994-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06168882-A |
| titleOfInvention | Method for manufacturing polycrystalline silicon thin film |
| abstract | (57) [Summary] [Object] To provide a method for manufacturing a polycrystalline silicon thin film having a large crystal grain size using a plasma CVD apparatus. [Structure] SiF 4 : Si was placed in a high vacuum reaction chamber. H 4 : F 2 (gas ratio 5: 1: 5, F / H ratio 7. 5: 1) reaction gas is supplied and its pressure is 0.5 Torr Adjust to. This reaction gas is turned into plasma to form a polycrystalline silicon thin film of about 3000 angstrom on the glass substrate heated to 400 ° C. In this manufacturing method, a hydrogen compound such as SiH 4 is applied instead of the hydrogen gas used in a large amount, so that the hydrogen concentration in the reaction gas becomes low, and the crystal grain size of the obtained polycrystalline silicon is The average particle size is as large as 2000 Å, the hydrogen concentration in the film is low at 0.1 atom%, and the electron mobility is 20.5 cm. Excellent at 2 / VS. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5786027-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9328414-B2 |
| priorityDate | 1991-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.