http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06163877-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_460c2d3884b7724541bf93de2a201dfd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1992-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7d6b49137146e73667d25b401b65cdc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec698ade1daa2b733ebbe41e155260b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcd90ca06ca0b19fa1d78d54d69c1c73 |
| publicationDate | 1994-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06163877-A |
| titleOfInvention | Semiconductor device |
| abstract | (57) [Abstract] [Purpose] Improve the life of semiconductor devices by forming contacts for high integration. [Structure] In a contact hole 110 formed in a CVD oxide film 106 which is an insulating layer covering a semiconductor element, a polycrystalline silicon film 107 is formed as the lowermost layer, and a refractory metal composite film 108 of a barrier metal is formed thereon. , An aluminum alloy electrode 109 is formed on it. The refractory metal composite film 108 has a lower layer of Ti and an upper layer of TiN. Silicon of the polycrystalline silicon film is originally a substrate material, and no abnormal diffusion occurs. Further, silicon in the upper layer portion of the polycrystalline silicon film 107 forms a silicide with Ti, and a volume change occurs in this layer and does not affect the diffusion region 105. This Ti silicide is about 17 μΩ ・ Since the resistivity is lower than the specific resistance value of Ti metal (about 45 μΩ ・ cm) in cm, not only the conductivity is secured, but also the wiring becomes thin at the step of the insulating layer and the resistance increases. There is also an effect to supplement. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6650017-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6815819-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6486555-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6908857-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6515363-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7186638-B2 |
| priorityDate | 1992-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.