http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06160335-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9772a8e55046288ba4602b2f27aea856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6dd74b20fbf2e0ebf10c7bfad4f6c8c5 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-41 |
| filingDate | 1992-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c86219fed4fdd4ee971d19bbfb442f8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e7c3b47b6cc8087643e420671939e4d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bc52129722dc94b0300f478f257a02c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87807055d68d51eea1df1ba84b816166 |
| publicationDate | 1994-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06160335-A |
| titleOfInvention | Method of manufacturing limiting current type oxygen sensor |
| abstract | (57) [Abstract] [Purpose] It is an object of the present invention to provide a method for manufacturing a thin film type limiting current oxygen sensor capable of obtaining excellent limiting current characteristics. [Structure] ZrO as an ion conductor film is formed on a substrate 11. A 2-Y2 O3 film 12 is formed, a Pt anode electrode 13 and a Pt cathode electrode 14 are formed thereon, and then a gas diffusion layer 15 is formed so as to cover the cathode electrode 14. The gas diffusion layer 15 is formed as a porous insulating ceramic film by printing and firing a mixed paste of silicon nitride powder and polysilazane which is a raw material polymer thereof. |
| priorityDate | 1992-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.