| abstract |
(57) [Summary] [Objective] A method for forming a Si clean surface consisting of terraces and steps flat at the atomic level while suppressing the warpage of Si, the increase of defects, the diffusion of impurities, etc. at a lower temperature than the conventional method. provide. [Composition] Ordinary Si11 is covered with SiO x 12, and the main pollution is CH x 13 When this is heated in a vacuum to 750 ° C or higher and O 2 gas is introduced while irradiating with ultraviolet rays, C in CH x is CO x due to the irradiation of ultraviolet rays and the ozone gas generated by O 2 gas. And H in CH x is also removed. SiO x is removed by sublimation of SiO. As a result, there are no obstacles for vacancy and surface diffusion of Si and movement of steps, and a Si clean surface composed of terraces and steps that is flat at the atomic level can be formed. |