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filingDate 1993-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dcf85b77b877c8e4177582c7a96d732
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publicationDate 1994-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06145987-A
titleOfInvention Method for forming titanium-based film
abstract (57) [Summary] [Structure] A method for forming a titanium-based film by forming a titanium-based film on a substrate by a CVD method using a gas containing an organic titanium compound and a reducing gas. [Effect] The substrate on which the titanium-based film is formed is kept at a temperature slightly higher than the decomposition temperature of the raw material gas used, and the raw material gas containing the above-mentioned organic titanium compound is reacted to cause decomposition temperature near the substrate. The raw material gas heated to the above can be decomposed, and titanium atoms can be deposited on the substrate to form a film. The organic compound generated by the decomposition is sublimated by the heat of the heated substrate. Therefore, a titanium-based film having good coverage and few impurities can be formed by a low temperature process.
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