http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06135796-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-08
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filingDate 1992-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b157d88743a75b76fb4d31e322781dd3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8355a793aafb5de1e4b09dbee04ae17
publicationDate 1994-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06135796-A
titleOfInvention Metal-organic vapor phase epitaxy apparatus and method
abstract (57) [Abstract] [Purpose] A metal-organic vapor phase epitaxy apparatus and method capable of growing an excellent epitaxial layer with few surface defects by preventing the epitaxial layer from being contaminated by GaAs or the like adhering to the wafer holder. Is to provide. [Organization] A growth chamber in which a rotary susceptor is arranged and a preliminary chamber for holding a wafer in a vacuum in advance are provided, and the growth chamber and one end of the preliminary chamber are connected by a transfer pipe through a gate valve. In the phase growth apparatus, the other end of the preparatory chamber is connected to a cleaning reaction tube by a transfer tube through a second gate valve, a wafer holder is accommodated in the reaction tube, and a cleaning reaction tube is accommodated at 800 A metal-organic vapor phase epitaxy apparatus and method in which a chloride gas is supplied at a temperature of ℃ or more to perform vapor phase etching, and then a new wafer is set in a holder and transferred to a growth chamber for epitaxial growth.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0020665-A1
priorityDate 1992-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.