http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06135711-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36
filingDate 1992-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fde7881761fabf27b16c365364998578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e52c0679dd5c60031b4030509e2a4536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dddb71c82925f46f5eee0245a44380a
publicationDate 1994-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06135711-A
titleOfInvention Method for manufacturing silicon carbide film
abstract (57) [Abstract] [Purpose] The present invention relates to a method for forming a silicon carbide film on a substrate surface kept at a low temperature under normal pressure. [Structure] In a method of heating a raw material gas composed of silicon halide, carbon halide and hydrogen at atmospheric pressure and forming a silicon carbide film by the generated active species, carbon halide has a biased molecular structure and charge distribution. A silicon carbide thin film is produced at a low temperature by using a material having a bias. At this time, the substrate temperature or the ambient temperature in the vicinity of the substrate is 140 ° C. which is a temperature lower than the decomposition temperature of the raw material gas. The temperature is 250 ° C.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105143503-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018135603-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016507001-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014097280-A1
priorityDate 1992-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426105758
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426098976
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6326
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415777190
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID74123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520721
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559546
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11643
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID83497
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327210
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863

Total number of triples: 33.