http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0613404-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 1992-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_034a853c5ade6aa10b342cd9a47a0ff0 |
| publicationDate | 1994-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0613404-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | (57) [Summary] (Modified) [Purpose] High-performance poly-Si TFT with low-temperature process An element structure and a manufacturing process for manufacturing the same are provided. In an insulated gate semiconductor device, a polycrystalline semiconductor layer 102 including a channel region mainly composed of silicon and doped with impurities such as boron, a gate insulating film 10 3, a gate electrode 104 having a sidewall 105, It has at least a gate electrode, a semiconductor thin film 106 doped with impurities selectively formed on the polycrystalline semiconductor layer, and a metal thin film 108 selectively formed on the thin film. [Effect] Self-aligned TF with offset structure T can be formed at a low temperature, and the resistance of the gate electrode and the source / drain region can be reduced at the same time. As a result, a high performance CMOS type poly-Si TFT can be formed on an inexpensive glass substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5744822-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100482462-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8008718-B2 |
| priorityDate | 1992-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.