http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0613276-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ffb78ca75fc93f2253a17935e1d14a2a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N3-00 |
| filingDate | 1991-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06ef619a5ffab437eb700ff6c7c4f307 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_597ab5436b7336f490f2ab306e01c541 |
| publicationDate | 1994-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0613276-A |
| titleOfInvention | Bonding strength measurement method for bonded wafers |
| abstract | (57) [Summary] [Objective] To provide a method capable of accurately measuring the bonding strength of a bonded wafer. [Structure] A bonded wafer in which two silicon single crystal wafers are bonded is processed to create a measurement sample piece, and two main surfaces of the measurement sample piece are held by two tensile test samples facing each other with an adhesive. In order to measure the bonding strength of the bonded wafers, each of which is fixed to a surface, and the tensile force applied to the two tensile test sample holding surfaces when the bonded surface of the wafer in the measurement sample piece is peeled off is measured. , After covering both main surfaces of the bonded wafer with a surface protective film that functions as a protective film at the time of processing, a portion except for the outer peripheral portion of the bonded wafer of about 3 mm is hollowed out into a circular shape by ultrasonic processing, and the protective film is further formed. The one from which was removed was used as a measurement sample piece. [Effect] It becomes possible to manufacture high quality bonded wafers, As a result, the secondary effect of improving the manufacturing yield and reliability of the semiconductor device manufactured can be obtained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109887855-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9527908-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112701058-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111323293-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112701058-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8448506-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6518501-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100289403-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110108776-A |
| priorityDate | 1991-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.