http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06125092-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 1992-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9eb2634a6057fb11109d385ac44dd30f |
| publicationDate | 1994-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06125092-A |
| titleOfInvention | Semiconductor memory device and manufacturing method thereof |
| abstract | (57) [Summary] [Object] To provide a semiconductor memory device having a source region capable of obtaining stable erase characteristics, and a manufacturing method thereof. [Constitution] At least the surface of the source region 2 near the end of the floating gate 5 is covered with a floating gate. It is a flat surface having the same height as the surface of the semiconductor substrate 1 underneath. Therefore, in the step of etching the field oxide film performed when the source region 2 is formed by the self-alignment method, the region where the source region is to be formed is previously formed. An etching resistant conductive film is selectively grown, or an insulating film is formed on at least the side wall of the stacked gates facing the source formation planned region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0680080-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0680080-A2 |
| priorityDate | 1992-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.