http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06123969-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1992-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_829ebf2c81b63b5452ab38bef4e45d11 |
| publicationDate | 1994-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06123969-A |
| titleOfInvention | Method of forming chemically amplified resist and resist pattern |
| abstract | (57) [Summary] [Purpose] With respect to a chemically amplified resist, the purpose is to eliminate pattern deterioration after exposure. [Structure] In a chemically amplified resist mainly composed of a polymer having a functional group whose polarity is changed by an acid catalyst and a photo-acid generator, a carboxylic acid ester is added to the resist in an amount of 1 to 10% by weight relative to the photo-acid generator. %, A chemically amplified resist is formed, and a resist pattern is formed by using this resist to perform selective exposure to far-ultraviolet light, perform post-baking, and then perform alkali development. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970028845-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100477100-B1 |
| priorityDate | 1992-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.