http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06120157-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 |
| filingDate | 1992-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_722ea7807847e9aca39020f5b9c7c78f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8564075a1f137d7b7c0c12f1d06650d |
| publicationDate | 1994-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06120157-A |
| titleOfInvention | Method for manufacturing silicon nitride insulating film |
| abstract | (57) [Abstract] [Purpose] To provide a method for manufacturing a silicon nitride-based insulating film, which has a stable dielectric constant and is particularly suitable for a high-precision capacitor. In a method of manufacturing the silicon nitride insulating film 18 by a low pressure chemical vapor deposition method using a silane-based gas and an ammonia-based gas, the volumetric flow ratio of the ammonia-based gas to the silane-based gas is 4 to 10. Then, the silicon nitride insulating film 18 is manufactured by the low pressure chemical vapor deposition method. The substrate 4 on which the insulating film 18 is formed is preferably heated to 740 to 760 ° C. The reduced pressure chemical vapor deposition method is preferably performed in a batch system. |
| priorityDate | 1992-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.