http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06110214-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 |
| filingDate | 1992-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bc15c38f2c371ec2852ba66d27dbe87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58e2b7d4b8e23c10ebbfbc8f69b6ac4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_390f927e8c42f12cbb15a388acf087f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dde844693451939cdeda0099922aef7c |
| publicationDate | 1994-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06110214-A |
| titleOfInvention | Method of forming resist pattern |
| abstract | (57) [Summary] [Object] The present invention relates to a method for forming a resist pattern, which can prevent the formation of an eaves on the positive resist pattern when finely forming a positive or negative resist pattern. At the same time, it is possible to prevent the negative resist pattern from being rounded, so that the resist pattern line width can be stably formed in a desired dimension, and the pattern line width after etching can be stably formed in a desired dimension. An object of the present invention is to provide a method for forming a resist pattern that can be used. A step of applying a chemically amplified resist on a substrate, a step of forming a transparent film containing a photo-acid generator on the chemically amplified resist, and a step of pattern exposing the chemically amplified resist. Then, it is configured to include a step of removing the transparent film and a step of developing the pattern-exposed chemically amplified resist to form a chemically amplified resist pattern. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006023699-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9733198-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023108998-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0789278-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102569112-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1441256-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8313892-B2 |
| priorityDate | 1992-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.