http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06102234-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-41
filingDate 1992-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87807055d68d51eea1df1ba84b816166
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publicationDate 1994-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06102234-A
titleOfInvention Limiting current type oxygen sensor
abstract (57) [Summary] [Objective] An object of the present invention is to provide a thin film type limiting current type oxygen sensor which realizes excellent thermal efficiency and excellent limiting current characteristics. A ZrO 2 —Y 2 O 3 film 13 is formed on a silicon substrate 11 via a silicon oxide film 12, and a cathode electrode 14 and an anode electrode 15 which mesh with each other in a comb pattern are formed on the ZrO 2 —Y 2 O 3 film 13. Gas diffusion layer 16 Is formed, and the heater electrode 17 is further disposed on this. The heater electrode 17 is formed in a meandering pattern so as to cover the gap between the cathode electrode 14 and the anode electrode 15, and the cathode electrode 14 and the anode electrode 15 of the ZrO 2 —Y 2 O 3 film 13 where ion conduction actually occurs. The part located between is effectively heated.
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priorityDate 1992-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.