http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0594982-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 1991-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_062005a81bdfd135bb5d587df542d181 |
| publicationDate | 1993-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0594982-A |
| titleOfInvention | Resist film manufacturing method |
| abstract | (57) [Summary] [Structure] The silicon nitride film (2) formed on the semiconductor substrate (1) is surface-treated with an acylating agent or an alkylating agent, and then the silicon nitride film (2) is exposed to the side surface. A method for producing a resist film, wherein a resist (3) having a carboxyl group as a chain is applied and heat-treated at a temperature of 150 ° C. or higher. [Effect] The imino group or amino group on the surface of the silicon nitride film (2) is hydrophobized by acylation or alkylation to reduce the reactivity of the resist (3) with respect to the carboxyl group to form a silicon nitride film (2). Bonding with the resist (3) can be reduced. That is, generation of the insolubilized resist film (3a) on the bottom surface of the opening of the resist (3) after exposure and development can be reduced. Therefore, It is possible to improve the accuracy of the resist pattern and form a fine resist pattern. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08306605-A |
| priorityDate | 1991-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.