http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H059090-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 1991-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a653986181745434610ac3ff50574f5d |
| publicationDate | 1993-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H059090-A |
| titleOfInvention | Crystal growth method |
| abstract | (57) [Abstract] [Purpose] [Structure] By solid phase growth of an amorphous semiconductor film or grain growth of a polycrystalline semiconductor film on the surface of a layer made of an amorphous insulator deposited on the surface of a substrate, A semiconductor thin film that is fine enough to be aggregated into a single substance is provided, and this thin film is subjected to heat treatment to cause an aggregation phenomenon to change into a single crystal of a single body. Grow a single crystal. [Effect] A single crystal part in which the crystal orientations are almost completely formed can be formed, which suppresses the variation in characteristics due to the difference in the crystal orientations of the elements formed on the crystal. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021080276-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6955954-B2 |
| priorityDate | 1991-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.