http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0590639-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 |
| filingDate | 1991-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5276eebddb3ab34c443b37e3d57a8864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_858724eb8cab0e1790c2cccd531bbeba |
| publicationDate | 1993-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0590639-A |
| titleOfInvention | Method for manufacturing semiconductor light emitting device |
| abstract | (57) [Summary] (Modified) [Objective] An object of the present invention is to provide a silicon carbide light emitting device having a higher external quantum efficiency than conventional devices. [Structure] Al-Si film 2 formed on n-type silicon carbide 11 By heat-treating 1, n − which is a light emitting layer The p-type silicon carbide layer 14 is formed by forming the type silicon carbide layer 13 and further heat-treating the Al film 22 deposited on the Al-Si 21 film. Further, by heat-treating the Al film 22 deposited on the n-type silicon carbide 11 and the group III metal film having an atomic radius larger than that of Al, n − which is a light emitting layer Type silicon carbide layer 13 and p type silicon carbide layer are formed simultaneously. [Effect] Since an insulating layer is not formed between the conductive type silicon carbide layers, a light emitting element having high external quantum efficiency can be formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009158702-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002503394-A |
| priorityDate | 1991-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.