http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0575205-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1991-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b2ee12caf2e3b2c0d9486bd0c535aba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d074b6d641b317ebbf6cc5ee901e5eae |
| publicationDate | 1993-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0575205-A |
| titleOfInvention | Semiconductor light emitting device |
| abstract | (57) [Abstract] [Purpose] Regarding semiconductor light emitting devices, small leakage current, The purpose is to provide a semiconductor laser device with high efficiency and high output. A one conductivity type InP substrate 1, a one conductivity type InP buffer layer 2 formed on the one conductivity type InP substrate 1, a part of the one conductivity type InP buffer layer 2, an InGaAsP active layer 3, and an opposite conductivity type. A p-type GaAs barrier layer 6 in contact with the p-type GaAs barrier layer 6 and a p-type GaAs barrier layer 6 covering the side surface of the mesa stripe part and the one-conductivity-type n-InP buffer layer 2 having a laminated structure composed of the InP clad layer 4 In It is configured by a semiconductor light emitting device having a P buried layer 7. In addition to the above structure, the semiconductor light emitting device has a p-type GaAs barrier layer that covers the surface of the p-type InP buried layer 7. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008227545-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006032730-A |
| priorityDate | 1991-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.