http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0567568-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 1991-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e62188f9b212e0b60d58500c77045b31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_166d1e11006e710b945dfb642ed7ad40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f2e9afcd6f435a413de4964c7c566c5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cf55e3263f2e6d962e1fc5a3831ac4f |
| publicationDate | 1993-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0567568-A |
| titleOfInvention | Semiconductor crystal thin film growth equipment |
| abstract | (57) [Summary] [Purpose] The pressures in the plasma generation chamber and the growth chamber can be controlled independently. [Structure] A plasma generating chamber 4 by ECR and a growth chamber 9 adjacent to the plasma generating chamber 4 and a growth chamber 9 adjacent to the plasma generating chamber 4 and the growth chamber 9 are independently controlled. It is characterized by the provision of. |
| priorityDate | 1991-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.