http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0562778-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5128cfc84a0fb189fceb3cd240c44493 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-00 |
| filingDate | 1991-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8b3c214147ac6fb994b409fa63f033a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e50ecfe29a90ae69ba36cf9758b98f58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad45d97fb9b0f94e108836fb70c7e415 |
| publicationDate | 1993-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0562778-A |
| titleOfInvention | Thin film electroluminescent device |
| abstract | (57) [Summary] [Structure] In a double-insulation thin-film EL element, the light-emitting layer is formed by a sputtering deposition method or the like at a substrate temperature of 150 ° C. or lower, and an amorphous thin film is sulfided with hydrogen sulfide or the like. It is manufactured by heat-treating at a temperature of 650 ° C. or higher in a volatile gas atmosphere. [Effect] Since a highly crystallized light emitting layer having a large crystal grain size can be obtained, a thin film EL element that emits light with high brightness can be manufactured. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010084698-A1 |
| priorityDate | 1991-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.