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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-16
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filingDate 1991-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_169acc551e6ed1475f0b431c915c0230
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fd180597a8df1605827061fb1896398
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publicationDate 1993-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0558676-A
titleOfInvention Method for producing SiO <2> -SiC-Si composite material
abstract (57) [Summary] [Structure] Porous S obtained by depositing carbon 13 produced by thermal decomposition of a gas containing a hydrocarbon gas or a halogenated hydrocarbon gas in a synthetic quartz glass porous body 10 filling the iO 2 -C composite material 15 with metallic silicon 14; A method for producing a SiO 2 —SiC—Si composite material 16 which is subjected to reaction sintering. [Effects] SiO 2 -S, which is not deformed even at high temperatures, has high strength, has very little impurities from the process, and is suitable for semiconductor jigs, for example. The iC-Si composite material 16 can be obtained relatively easily by low temperature treatment. Therefore, it is possible to provide a high-purity SiO 2 —SiC—Si composite material 16 useful for a heat-resistant jig such as a process tube or a wafer boat used for thermal diffusion treatment of a silicon wafer, which is extremely industrially possible. It is useful.
priorityDate 1991-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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