http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0555693-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 1991-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dae74ae35d4bd81837c0d6818226100 |
| publicationDate | 1993-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0555693-A |
| titleOfInvention | Optical functional element and method for manufacturing optical functional element |
| abstract | (57) [Summary] (Modified) [Configuration] A mask made of SiO 2 or the like is formed on the n-GaAs substrate 101. Next, a II-VI group compound semiconductor 103 such as ZnSSe is selectively grown. Then, n-GaAs A group II element such as Zn is selectively diffused in the substrate to obtain an optical functional element in which the p-region 106 is formed in the vicinity of the group II-VI compound semiconductor. [Effect] Since the electrode separated from the substrate is obtained by self-alignment, a precise pattern can be created with good reproducibility, and high integration is facilitated. Further, since it is not necessary to use a metal for the electrodes, characteristic deterioration due to variations in the equivalent refractive index does not occur. |
| priorityDate | 1991-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.