http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0555687-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1991-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1642198272d10356a08bec92468952a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75475b51c57492259fc23ba4f1ab2cfd |
| publicationDate | 1993-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0555687-A |
| titleOfInvention | Laser transistor |
| abstract | (57) [Abstract] [Purpose] To provide a structure in which a laser transistor having stable characteristics can be reliably manufactured without exposing the active layer to the outside after forming the active layer. [Structure] An epitaxial growth that is continuously epitaxially grown on a semiconductor substrate 2 on which stripe-shaped mesas 1 along the 011 crystal axis direction are formed on 100 crystal faces and is separated from the others on the mesa 1 in a limited manner. Laser section 7 And a semiconductor layer grown on both side grooves 3 of the mesa 1 cooperates with each other to form a vertical or horizontal laser transistor. |
| priorityDate | 1991-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.