http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0555201-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-46
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filingDate 1991-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe66511ce148e472549f7fb121434e81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6ccd7503877bf79591e6f1b0c825963
publicationDate 1993-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0555201-A
titleOfInvention Insulating film for semiconductor and the method of forming them
abstract (57) [Abstract] [PROBLEMS] To provide an insulating film, a planarizing film, and a method for forming the same, which are improved in degassing, shrinkage, and hygroscopicity when heated at high temperature, for semiconductor multilayer wiring. A polyorganosilsesquioxane having a methyl group or a phenyl group as a side chain, having a number average molecular weight of 500 to 10,000, a hydroxyl group of 0.3 to 6% by weight as an end group, and an alkoxy group 0.9 to 16% by weight An organic solvent solution of what is contained is coated on the wiring of the substrate and cured by heating. [Effect] It is excellent in flattening and can be heat-cured at a relatively low temperature. Curing shrinkage is small, the completion of curing reaction is high, and degassing and shrinkage at high temperature heating are small.
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Total number of triples: 29.