http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0547678-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
| filingDate | 1991-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c89e4c46f81b3647b1d1b3647e42bb66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42158e3900dbfffd9358bfbc492f7a1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e74008f242497c8c60bf4a24cc6c6e5 |
| publicationDate | 1993-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0547678-A |
| titleOfInvention | Silicon film manufacturing method and silicon film manufacturing apparatus |
| abstract | (57) [Abstract] [Purpose] A polycrystalline silicon film is deposited on a low-temperature substrate at high speed. [Structure] A gas G1 in which silane gas (silicon compound gas) and silicon single crystal fine particles are mixed is introduced from a source gas introduction pipe 5. By the arc discharge generated between the cathode 1 and the anode 4, the argon gas G2 introduced from the inert gas introduction tube 3 is turned into plasma. The gas G1 is mixed with argon plasma, the silane gas (silicon compound gas) is decomposed by the heat of the plasma, and the silicon single crystal fine particles are heated and deposited on the substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006100551-A |
| priorityDate | 1991-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.