http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0541433-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2831 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-60 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 1991-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_518e7624c4810577013319e28e1caa1e |
| publicationDate | 1993-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0541433-A |
| titleOfInvention | Method for analyzing metal impurities in surface oxide film of semiconductor substrate |
| abstract | (57) [Abstract] [Purpose] In a surface oxide film of a semiconductor substrate, which is low-cost, small-sized, uses a simple method that does not require a vacuum, and enables detection sensitivity of the order of 10 10 atoms / cm 2 . A method for analyzing metallic impurities is provided. A fixed charge amount due to a metal impurity existing in a surface oxide film formed on a semiconductor substrate is measured, a correlation between the metal impurity amount and the fixed charge amount is obtained, and based on this correlation Then, the metal impurities in the oxide film are quantified from the fixed charge amount of the surface oxide film to be analyzed. Further, the relative relationship between the distance in the depth direction of the thermal oxide film formed on the silicon substrate and the fixed charge amount due to the metal impurities in the thermal oxide film is obtained, and separately from this, It is possible to obtain the correlation between the amount of metal impurities in the above-mentioned and the amount of fixed charges resulting therefrom, and to obtain the concentration distribution of the metal impurities in the thermal oxide film based on these correlations. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003037142-A |
| priorityDate | 1990-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.