http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05343789-A

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filingDate 1991-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1993-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05343789-A
titleOfInvention Semiconductor distributed feedback laser device and method for manufacturing semiconductor element
abstract (57) [Summary] [Objective] In a semiconductor distributed feedback laser device having a structure for obtaining distributed light feedback by a periodic light absorption layer, sufficient distributed feedback is obtained while making the average absorption loss as small as possible. [Structure] A periodic light absorption layer is arranged outside a stripe-shaped region along a light propagation region.
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Total number of triples: 21.