http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05343227-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F41-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-24
filingDate 1992-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d509e6f0b86302727e10faf86df68ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaa5c29747074cc508ed92fe82d465ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_517a7b9b517970c7515ef017e2ef5c7e
publicationDate 1993-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05343227-A
titleOfInvention Garnet thin film
abstract (57) [Summary] (Modified) [Objective] To provide a garnet thin film having a structure that reduces stress between the substrate and the thin film and has a high magneto-optical effect in manufacturing the magneto-optical thin film using Ce-substituted YIG. [Constitution] The garnet thin film of (1) to (3) is used. In a Ce-substituted YIG thin film formed on a crystal substrate with a garnet structure, (1) part or all of iron (Fe) is Al, Ga or A Replace with both l and Ga. (2) Part of Y is Lu, Yb, T Substitute with one or several elements selected from m, Er, Dy, Tb, Gd, and Eu. Part of Fe is replaced with Al, Ga or both, and part of Ce is Lu, Yb, Tm, Er, D Substitute with one or several elements selected from y, Tb, Gd, and Eu.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105714379-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105714379-A
priorityDate 1992-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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