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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-0632
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
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filingDate 1992-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be4a3e9ab54c5eb8727bd5f5e9ad69d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d15f7e0bb7ce7157272667015a9763b
publicationDate 1993-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05327034-A
titleOfInvention Epitaxial magnesium oxide as a buffer layer for forming the next layer on a tetrahedral semiconductor
abstract (57) [Summary] (Modified) [Objective] An MgO buffer layer is provided on the tetrahedral semiconductor substrate 12 to enable epitaxy generation of a later layer and facilitate formation of some monolithic devices. The structure of the present invention includes a semiconductor substrate on which an epitaxial buffer layer made of MgO, an epitaxial layer made of a ferroelectric material, an epitaxial layer made of a superconductor material, or both layers are formed. I'm out. The semiconductor substrate is of tetrahedral structure type and may be an elemental material or a compound material. The MgO buffer layer on the tetrahedral semiconductor substrate allows epitaxy generation of later layers, facilitating the formation of some novel monolithic devices.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5576879-A
priorityDate 1991-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 36.