http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05326564-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 |
| filingDate | 1992-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1028dab44ffece7c354bd3232fdbe46 |
| publicationDate | 1993-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05326564-A |
| titleOfInvention | Field effect transistor and manufacturing method thereof |
| abstract | (57) [Abstract] [Purpose] To obtain a field-effect transistor having a two-step recess structure which has a low resistance and a finely controlled gate which is precisely controlled, and which is dimensionally controlled with high precision. [Structure] On a semi-insulating GaAs substrate 21, a side wall made of a second insulating film 28 is formed on the side wall of the recess of the first stage which is not in contact with the gate electrode. The GaAs layer 23 was removed so that an undercut was formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003059949-A |
| priorityDate | 1992-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419547108 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6384 |
Total number of triples: 14.