http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05312896-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-18 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-73 |
filingDate | 1991-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f515c977ec4784912a5b05316e04c8e3 |
publicationDate | 1993-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H05312896-A |
titleOfInvention | SCR conductivity measuring method and measuring apparatus |
abstract | (57) [Summary] [Object] To provide an apparatus and a method related to the operation of a silicon controlled rectifying device, which determines that the SCR is completely turned off and the applied potential can be blocked. The technique senses the amplitude of the SCR voltage at the gate terminal with respect to the cathode. When the drive signal to the SCR 24 is removed, the gate voltage is monitored with respect to the cathode. The gate voltage is compared with the predetermined threshold voltage level by comparing the measured gate-cathode voltage. Putting CR in a non-conductive off state produces a logic output level indicative thereof. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007527535-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4887280-B2 |
priorityDate | 1990-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 18.