http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05312896-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-18
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-73
filingDate 1991-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f515c977ec4784912a5b05316e04c8e3
publicationDate 1993-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05312896-A
titleOfInvention SCR conductivity measuring method and measuring apparatus
abstract (57) [Summary] [Object] To provide an apparatus and a method related to the operation of a silicon controlled rectifying device, which determines that the SCR is completely turned off and the applied potential can be blocked. The technique senses the amplitude of the SCR voltage at the gate terminal with respect to the cathode. When the drive signal to the SCR 24 is removed, the gate voltage is monitored with respect to the cathode. The gate voltage is compared with the predetermined threshold voltage level by comparing the measured gate-cathode voltage. Putting CR in a non-conductive off state produces a logic output level indicative thereof.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007527535-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4887280-B2
priorityDate 1990-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541

Total number of triples: 18.