http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05308173-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18355 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18361 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3202 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-062 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1992-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24a1ccde6282a2c2b4fca2a4512ffc84 |
| publicationDate | 1993-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05308173-A |
| titleOfInvention | Semiconductor laser |
| abstract | (57) [Summary] [Objective] To obtain a vertical cavity type semiconductor laser in which the polarization of output laser light is controlled. [Structure] An n-type impurity-doped GaAs / AlAs multilayer film on a GaAs substrate 1, a first reflection mirror layer 2 having a quantum wire periodic structure of GaAs / AlAs, and n-type impurity-doped AlGaAs. First confinement layer 3, active layer 4 in which undoped InGaAs is sandwiched between undoped AlGaAs, second confinement layer 5 made of p-type doped AlGaAs, p-type doped The second reflective mirror layer 6 is formed of the GaAs and AlAs multilayer film, the Au metal electrode, and the GaAs cap layer formed between the two. The quantum wire structure of the first reflection mirror layer 2 has a polarization dependency of reflectance. The resonance wavelength of the resonator formed by the first reflecting mirror layer and the second reflecting mirror layer 6 and the first The polarization direction of the vertical cavity type semiconductor laser can be controlled by adjusting the wavelength of the reflection mirror layer 2 having a large polarization difference. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006011370-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014500622-A |
| priorityDate | 1992-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID89859 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522218 |
Total number of triples: 23.