| abstract |
(57) [Summary] [Objective] Regarding the oxygen precipitation method of a silicon wafer in which oxygen is precipitated inside the silicon wafer manufactured by the Czochralski method, even a silicon wafer with a low oxygen concentration can be sufficiently processed with a short practical treatment time. An object of the present invention is to provide a method for oxygen precipitation of a silicon wafer capable of forming an amount of oxygen precipitate. [Structure] A silicon wafer is heated in a temperature range of about 1000 to 1200 ° C. to perform an outward diffusion heat treatment for diffusing surface oxygen outward, and then a low temperature heat treatment in a temperature range of about 300 to 600 ° C. Is performed in a crystal containing hydrogen or an atmosphere containing hydrogen. After this low temperature heat treatment, heat treatment at about 600 to 900 ° C. is performed to form oxygen precipitation nuclei, and subsequently high temperature heat treatment at about 900 to 1100 ° C. is performed to grow oxygen precipitates. |