http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05303127-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-35
filingDate 1992-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bef8926386e68f158d2c3d2d50dd7ce5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbd4f2b4095bb6490993b3d1458147e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_636ede7af09902efb940dc885d404fca
publicationDate 1993-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05303127-A
titleOfInvention Method for producing semiconductor fine particle or metal fine particle dispersed material
abstract (57) [Summary]n[Purpose] Semiconductor fine particles having uniform particle size and / or In addition, it is possible to disperse metal fine particles at a high concentration. Easily manufacture materials with good third-order nonlinear optical properties Provide a way ton[Structure] Si (OC 2 H Five ) Four To ethanol solution etc. Molar amount of Cd (NO 3 ) 2 Aqueous solution and SC (NH 2 ) 2 Mixed with an aqueous solution of Evaporation is performed and a CdS microparticle with a particle size of 3 to 3.5 nm is deposited on the quartz glass. SiO with 8 wt% particles dispersed 2 Glass thin film is formed It
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7718273-B2
priorityDate 1992-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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