http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05299689-A

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filingDate 1992-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0313350759615dc72e34d3f40fb927a1
publicationDate 1993-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05299689-A
titleOfInvention Surface input / output optoelectronic device
abstract (57) [Summary] [Objective] A surface emitting laser device having the same basic layer structure and a low laser oscillation threshold and a light receiving device having a wide light receiving band are formed on the same surface. [Structure] The DBRs 2, 4 and 11 constitute a resonator, and the active layer / absorption layer 8 inserted between the DBR 4 and the DBR 11 serves as a light emitting portion 17 and a light receiving portion 16, respectively. Further, the light receiving band is widened by inserting the spacer layer 3 having a half wavelength of the medium in the light receiving portion. [Effect] A low threshold value and a low resistance can be realized by simply changing the layer structure by using the technique of manufacturing the vertical cavity surface emitting semiconductor laser.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6667496-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010021337-A
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Total number of triples: 23.