http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05291182-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 1992-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19ab67dff5ab20b95f020a82eef8efa6 |
| publicationDate | 1993-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05291182-A |
| titleOfInvention | ECR plasma processing method |
| abstract | (57) [Abstract] [Purpose] To obtain an ECR plasma processing technique that suppresses the generation of particles even when the number of processed substrates is increased and improves the yield of devices. In the ECR plasma CVD for forming the TiN film 1b after forming the Ti film 1a, the TiN film 1b is formed a predetermined number of times, and then the Ti film for preventing film peeling is dummy-deposited to form the TiN film 1b. Suppressed the generation of particles. |
| priorityDate | 1992-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5352426 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524915 |
Total number of triples: 15.