http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05275663-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-96 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 1992-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05275663-A |
| titleOfInvention | Semiconductor element substrate and manufacturing method thereof |
| abstract | (57) [Summary] [Purpose] To provide an SOI substrate that can replace expensive SOS and SIMOX, and a method for manufacturing the substrate with extremely high productivity, high uniformity, and high controllability. To do. [Structure] Porous Si12 formed on one Si substrate 11 Oxidize the inner wall of the hole and form single crystal Si13 on it, The surface of the single crystal Si layer 13 and the other Si supporting substrate 14 (or the light transmissive substrate 44) are bonded together via the insulating layer 15. First, the Si substrate 11 is selectively used as a porous Si 12 as an etch stop layer. Then, the porous Si 13 is selectively chemically etched by using the single crystal Si layer 13 as an etch stop layer (hydrofluoric acid (+ hydrogen peroxide solution) (+ alcohol) or buffered hydrofluoric acid (+)). Hydrogen peroxide water) (+ alcohol)) Thin film having a single crystal structure on the insulating layer 15 removed by The Si layer 13 is formed uniformly. The present invention has been demonstrated experimentally. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005069356-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6380099-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6255731-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2256786-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6258244-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100852597-B1 |
| priorityDate | 1992-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.