| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
1992-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1993-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H05275452-A |
| titleOfInvention |
Thin film insulating gate type semiconductor device and manufacturing method thereof |
| abstract |
(57) [Abstract] [Purpose] In an inverted staggered thin film transistor, It is intended to simplify a manufacturing process or reduce unevenness of a thin film transistor to be obtained. A manufacturing method including a step of selectively doping a semiconductor region on a gate insulating film with an impurity to form a source, a drain, and a channel forming region, and a step of laser annealing the same, or a method of manufacturing the semiconductor region. A manufacturing method including a step of selectively performing impurity doping by a laser doping method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0913860-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008098638-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7504325-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004349583-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0913860-A2 |
| priorityDate |
1992-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |