http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05275435-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 1992-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05275435-A |
| titleOfInvention | Silicon substrate heat treatment method |
| abstract | (57) [Abstract] [Purpose] A heat treatment is performed in an H 2 gas atmosphere to improve the quality of the surface of a silicon substrate, and the oxide film to be laminated later is not deteriorated. provide. [Structure] When a silicon substrate is heat-treated in a heat treatment furnace in a H 2 gas atmosphere at a temperature of 1100 ° C. or higher to reduce the interstitial oxygen concentration on the surface of the silicon substrate, the H 2 gas causes silicon to be deposited on the silicon substrate. The silicon-containing molecules having a concentration that does not precipitate are mixed and heat-treated. |
| priorityDate | 1992-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.