http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05275333-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1992-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05275333-A |
| titleOfInvention | Method for manufacturing polycrystalline silicon thin film |
| abstract | (57) [Summary] [Objective] To form a high-quality polycrystalline silicon thin film. [Structure] A first amorphous silicon film (2) formed so as to be scattered on a supporting substrate (1) is irradiated with laser light to form a single crystal silicon region (2a). Then, a second amorphous silicon film (4) is formed so as to cover the single crystal silicon region (2a), and then heat treatment is applied to polycrystallize it. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107017153-A |
| priorityDate | 1992-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408 |
Total number of triples: 14.