http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05275327-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1992-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05275327-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] (Modified) [Objective] A method of manufacturing a semiconductor device, in particular, a method of forming a groove for element isolation, in which a high aspect ratio groove is etched once by forming a mask for etching once. It is intended to provide a method that can be easily formed by. In a manufacturing of a semiconductor device including a step of forming an etching mask having a predetermined pattern on a semiconductor substrate 1 and forming a groove by dry etching using the etching mask, the etching mask is used as a resist film. 2- 1, a three-layer structure film of the metal film 3 and the metal oxide film 4 is used. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005313278-A |
| priorityDate | 1992-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.