http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05257276-A
Outgoing Links
Predicate | Object |
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classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate | 1992-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1993-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H05257276-A |
titleOfInvention | Positive photoresist composition |
abstract | (57) [Abstract] [Purpose] (1) A positive photoresist composition having high resolution, (2) A positive photoresist composition that accurately reproduces mask dimensions over a wide range of photomask line width, (3) A positive photoresist composition capable of forming a resist pattern having a cross-sectional shape with a high aspect ratio in a pattern having a line width of 1 μm or less, (4) a pattern having a shape in which the side wall of the pattern cross section is nearly vertical Provided are a positive photoresist composition to be obtained, (5) a positive photoresist composition having a wide development latitude, and (6) a positive photoresist composition in which the resulting resist image has excellent heat resistance. A positive photoresist composition comprises a 1,2-naphthoquinonediazide-5- (and / or-4-) sulfonic acid ester of a polyhydroxy compound represented by the following general formula (I) and an alkali-soluble resin. contains. [Chemical 1] |
priorityDate | 1992-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 193.