http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05251442-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 1992-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e8b6b4db4c3da0a5d19eca9d6534d94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_537ceb3713287c9e577dc513af693345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c1e962efee6cb11347e04c81b6e362c |
| publicationDate | 1993-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05251442-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Abstract] [Purpose] The unevenness due to the laminated structure wiring 1 having the metal 1b oxidized by ozone on the surface side is flattened. Moreover, good ohmic contact is obtained between the laminated structure wiring 1 and the upper layer wiring 7 provided thereon. [Structure] After providing a laminated structure wiring 1 on a semiconductor substrate (not shown), a first insulating film 2 for covering the surface and the side surface of a laminated structure wiring first floor slab is deposited by a plasma TEOS-based CVD method. Then, the second insulating film 3 for filling the irregularities on the first insulating film 2 by the TEOS-O 3 -based atmospheric pressure CVD method. Deposit. |
| priorityDate | 1992-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.