http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05243499-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
filingDate 1992-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1993-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05243499-A
titleOfInvention Semiconductor integrated circuit and manufacturing method thereof
abstract (57) [Summary] [PROBLEMS] To provide a resistor in a semiconductor integrated circuit, which can increase and decrease the resistance value and which does not damage a passivation film, and a method for adjusting the resistance value thereof. Constitution: Polysilicon doped with impurities is used as a resistor, and an impurity of the same type as the impurity doped in the polysilicon resistor is diffused into the polysilicon resistor by laser heating, or the resistance value is reduced, or By diffusing different types of impurities to increase the resistance value, the resistance value is reduced / increased, and the necessary (optimal) resistance value is adjusted.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6329272-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0077836-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7564078-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002217379-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003502841-A
priorityDate 1992-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.