http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05235184-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1992-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bc0f65b3899b31e23f58aadf7460312
publicationDate 1993-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05235184-A
titleOfInvention Method for manufacturing multilayer wiring structure of semiconductor device
abstract (57) [Summary] [Purpose] To prevent peeling and swelling of the upper plasma oxide film when forming a multilayer wiring structure. [Structure] A first silicon oxide film 104 is formed by a plasma CVD method as an interlayer insulating film of a multilayer wiring structure, and a normal pressure C using tetraethoxysilane and oxygen gas containing ozone is used. Flow rate ratio of ozone and tetraethoxysilane of 10 by VD method: The second silicon oxide film 105 is formed under one or more conditions, the organic coating film 106 is formed by the spin coating heat treatment method, and the organic coating film and the second silicon oxide film are etched back by the dry etching method to perform organic coating. Completely remove the membrane. Next, the third silicon oxide film 10 is formed by the plasma CVD method. Form 7. In this way, the third plasma CVD Prevents the silicon oxide film from peeling and swelling.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0678914-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100390892-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100480230-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0678914-A3
priorityDate 1992-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24823
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559478
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517

Total number of triples: 23.