http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05235184-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate | 1992-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bc0f65b3899b31e23f58aadf7460312 |
publicationDate | 1993-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H05235184-A |
titleOfInvention | Method for manufacturing multilayer wiring structure of semiconductor device |
abstract | (57) [Summary] [Purpose] To prevent peeling and swelling of the upper plasma oxide film when forming a multilayer wiring structure. [Structure] A first silicon oxide film 104 is formed by a plasma CVD method as an interlayer insulating film of a multilayer wiring structure, and a normal pressure C using tetraethoxysilane and oxygen gas containing ozone is used. Flow rate ratio of ozone and tetraethoxysilane of 10 by VD method: The second silicon oxide film 105 is formed under one or more conditions, the organic coating film 106 is formed by the spin coating heat treatment method, and the organic coating film and the second silicon oxide film are etched back by the dry etching method to perform organic coating. Completely remove the membrane. Next, the third silicon oxide film 10 is formed by the plasma CVD method. Form 7. In this way, the third plasma CVD Prevents the silicon oxide film from peeling and swelling. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0678914-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100390892-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100480230-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0678914-A3 |
priorityDate | 1992-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.