| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a6dba62f271c25a0be3cda568892859 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G5-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23G5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
1992-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7647f0c338ca7086868cee0d51dc08f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_280f359384554cc88e83842507077a61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9aa23b4e171810cd461696195a1a709d |
| publicationDate |
1993-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H05234973-A |
| titleOfInvention |
METHOD FOR CLEANING METAL OXIDE SURFACE IN MANUFACTURING INTERCONNECTION NETWORK AND WAFER FOR CONNECTION THEREOF |
| abstract |
(57) [Abstract] [Purpose] To remove oxides from the surface to be metallized and to use an intermediate mask without consuming the conductive material or to resputter the dielectric material on the surface to be metallized. There is provided a cleaning treatment method capable of cleaning the surface thereof. The invention comprises at least (a) a first metallized conductive layer and (b) a dielectric layer deposited on the metallized conductive layer and then etched to expose a surface or contact hole to be metallized. And (c) a treatment method for cleaning an oxidized metallized surface used in the manufacture of an interconnect network wafer comprising a second metallization layer deposited on the etched dielectric layer. , The etched wafer is treated with a microwave multi-pole plasma in a hydrogen environment prior to depositing the second metallization layer. The invention also relates to an interconnect network wafer having a metallized surface cleaned according to the invention. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4681117-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002500276-A |
| priorityDate |
1991-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |