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Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
filingDate 1992-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70d4d673c74d01346bea84401a7bd93a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_578790fb3de44d3abecb25c8fad6a150
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publicationDate 1993-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05221796-A
titleOfInvention Method for manufacturing silicon carbide body
abstract (57) [Summary] [Object] To provide a controlled polymorphic silicon carbide body. A method for manufacturing a silicon carbide body using a sublimation recrystallization method, the method including sublimating silicon carbide powder containing aluminum in a predetermined ratio in an atmosphere of an inert gas containing nitrogen, and recrystallizing the powder. To do. The pressure of the inert gas during sublimation recrystallization is 200 torr or less, and the rate of change of pressure is 5 torr or less per minute.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009179491-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4697235-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021195298-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9850605-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8470698-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113322520-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9512540-B2
priorityDate 1992-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.